PIN - Single 0.3pF @ 100V 1MHz -65°C~150°C TJ 2 Terminations SILICON NOT SPECIFIED Bulk DO-204AH, DO-35, Axial
SOT-23
1N5719 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Package / Case
DO-204AH, DO-35, Axial
Surface Mount
NO
Diode Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2007
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
LOW HARMONIC DISTORTION
HTS Code
8541.10.00.70
Subcategory
PIN Diodes
Technology
POSITIVE-INTRINSIC-NEGATIVE
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
1N5719
JESD-30 Code
O-LALF-W2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
250mW
Diode Type
PIN - Single
Case Connection
ISOLATED
Application
ATTENUATOR; SWITCHING
Current - Max
100mA
Capacitance @ Vr, F
0.3pF @ 100V 1MHz
Voltage - Peak Reverse (Max)
150V
Breakdown Voltage-Min
150V
Reverse Test Voltage
100V
Diode Capacitance-Nom
0.25pF
Resistance @ If, F
1.25Ohm @ 100mA 100MHz
Diode Capacitance-Max
0.3pF
Minority Carrier Lifetime-Nom
0.1 µs
Diode Res Test Current
100mA
Diode Res Test Frequency
100MHz
RoHS Status
Non-RoHS Compliant
1N5719 Product Details
1N5719 Overview
Designed to operate from a maximum of 100mA volts, this device operates from a maximum current of 100mA volts.The maximum reverse voltage of this device is in accordance with its applicable specifications.The device may run at its lowest breakdown voltage of 150V occasionally.Ideally, the reverse test voltage should be within 100V.
1N5719 Features
from a maximum current of 100mA volts at its lowest breakdown voltage of 150V
1N5719 Applications
There are a lot of Broadcom Limited 1N5719 applications of RF diodes.