PIN - Single 0.4pF @ 50V 1MHz -65°C~150°C TJ 2 Terminations SILICON NOT SPECIFIED Bulk DO-204AH, DO-35, Axial
SOT-23
1N5767 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Package / Case
DO-204AH, DO-35, Axial
Surface Mount
NO
Diode Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2007
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
LOW HARMONIC DISTORTION
HTS Code
8541.10.00.70
Subcategory
PIN Diodes
Technology
POSITIVE-INTRINSIC-NEGATIVE
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
1N5767
JESD-30 Code
O-LALF-W2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
250mW
Diode Type
PIN - Single
Case Connection
ISOLATED
Application
ATTENUATOR; SWITCHING
Current - Max
100mA
Capacitance @ Vr, F
0.4pF @ 50V 1MHz
Voltage - Peak Reverse (Max)
100V
Breakdown Voltage-Min
100V
Diode Capacitance-Nom
0.4pF
Resistance @ If, F
2.5Ohm @ 100mA 100MHz
Diode Capacitance-Max
0.4pF
Minority Carrier Lifetime-Nom
1.3 µs
Diode Res Test Current
100mA
Diode Res Test Frequency
100MHz
RoHS Status
Non-RoHS Compliant
1N5767 Product Details
1N5767 Overview
The maximum current of this device is 100mA.This device operates at a maximum reverse voltage of 100V in accordance with its applicable specifications.This device may operate at its lowest breakdown voltage of 100V on occasion.
1N5767 Features
from a maximum current of 100mA volts at its lowest breakdown voltage of 100V
1N5767 Applications
There are a lot of Broadcom Limited 1N5767 applications of RF diodes.