AT-41511-TR1G

new-10%

Manufacturer part number:AT-41511-TR1G

Manufacturer:Broadcom Limited

Description:AVAGO TECHNOLOGIES AT-41511-TR1G Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 225 mW, 50 mA, 150

Case Package:SOT-23

Datasheet:AT-41511-TR1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Gold
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-253-4, TO-253AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	Other Transistors
Voltage - Rated DC	1.5V
Max Power Dissipation	225mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	50mA
Frequency	10GHz
Base Part Number	AT41511
Number of Elements	1
Configuration	SINGLE
Power Dissipation	225mW
Case Connection	COLLECTOR
Transistor Application	AMPLIFIER
Polarity/Channel Type	NPN
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	12V
Max Collector Current	50mA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA 5V
Collector Emitter Breakdown Voltage	12V
Gain	11dB ~ 15.5dB
Transition Frequency	10GHz
Max Breakdown Voltage	12V
Collector Base Voltage (VCBO)	20V
Emitter Base Voltage (VEBO)	1.5V
hFE Min	30
Continuous Collector Current	50mA
Noise Figure (dB Typ @ f)	1dB ~ 1.7dB @ 900MHz ~ 2.4GHz
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free