AT-42000-GP4 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Broadcom Limited stock available on our website
SOT-23
AT-42000-GP4 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
Die
Number of Pins
2
Operating Temperature
200°C TJ
Packaging
Tray
Published
2008
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
600mW
Frequency
9GHz
Power Dissipation
600mW
Gain Bandwidth Product
9 GHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
80mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 35mA 8V
Collector Emitter Breakdown Voltage
12V
Gain
10.5dB ~ 14dB
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
1.5V
Continuous Collector Current
80mA
Noise Figure (dB Typ @ f)
1.9dB ~ 3dB @ 2GHz ~ 4GHz
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
AT-42000-GP4 Product Details
AT-42000-GP4 Description
Avago’s AT-42000 is a general-purpose NPN bipolar transistor chip that offers excellent high-frequency performance. The 4-micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20-emitter finger interdigitated geometry yields a medium-sized transistor with impedances that are easy to match for low noise and medium power applications.
This device is designed for use in low noise, wideband amplifiers, mixers, and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50W up to 1 GHz, makes this device easy to use as a low-noise amplifier.