HSMS-282N-TR1G datasheet pdf and Diodes - RF product details from Broadcom Limited stock available on our website
SOT-23
HSMS-282N-TR1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Mount
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Diode Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
HTS Code
8541.10.00.80
Capacitance
1pF
Subcategory
Other Diodes
Voltage - Rated DC
15V
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1A
Number of Elements
4
Max Current Rating
1A
Element Configuration
Common Anode
Diode Type
Schottky - 2 Pair Common Anode
Output Current
1A
Max Reverse Leakage Current
100nA
Breakdown Voltage
15V
Forward Voltage
500mV
Max Repetitive Reverse Voltage (Vrrm)
15V
Capacitance @ Vr, F
1pF @ 0V 1MHz
Reverse Test Voltage
1V
Frequency Band
C B
Resistance @ If, F
12Ohm @ 5mA 1MHz
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
HSMS-282N-TR1G Product Details
HSMS-282N-TR1G Overview
The forward voltage should be kept above 500mV V.Our reference here is to 1pF capacitance.A valid conversion result requires a reverse test voltage within 1V.The current rating for this part is 1A.
HSMS-282N-TR1G Features
1pF capacitance
HSMS-282N-TR1G Applications
There are a lot of Broadcom Limited HSMS-282N-TR1G applications of RF diodes.
Sensor interfaces of security systems
Low-loss, high-power limiters
Diode ring mixer
Bandswitch for TV tuners
Low diode capacitance
Wearables
Band switching
Low diode forward resistance
Set top boxes
Broadband system applications i.e. WCDMA, CATV, etc.