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NE3210S01

NE3210S01

NE3210S01

CEL

RF JFET Transistors Super Lo Noise HJFET

SOT-23

NE3210S01 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Package / Case 4-SMD
Number of Pins 1
Packaging Strip
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Operating Temperature 125°C
Min Operating Temperature -65°C
Additional Feature HIGH RELIABILITY
Max Power Dissipation 165mW
Terminal Position RADIAL
Terminal Form GULL WING
Current Rating 15mA
Frequency 12GHz
Pin Count 4
JESD-30 Code O-PRDB-G4
Number of Elements 1
Configuration SINGLE
Operating Mode DEPLETION MODE
Power Dissipation 165mW
Case Connection SOURCE
Current - Test 10mA
Drain to Source Voltage (Vdss) 4V
Polarity/Channel Type N-CHANNEL
Transistor Type HFET
Continuous Drain Current (ID) 70mA
Gate to Source Voltage (Vgs) -3V
Gain 13.5dB
Drain to Source Breakdown Voltage 4V
FET Technology HETERO-JUNCTION
Noise Figure 0.35dB
Voltage - Test 2V
Radiation Hardening No
RoHS Status RoHS Compliant

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