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NE5550279A-A

NE5550279A-A

NE5550279A-A

CEL

FET RF 30V 900MHZ 79A

SOT-23

NE5550279A-A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Package / Case 4-SMD, Flat Leads
Number of Pins 4
Supplier Device Package 79A
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated 30V
Current Rating (Amps) 600mA
Current Rating 600mA
Frequency 900MHz
Base Part Number NE5550
Current - Test 40mA
Transistor Type LDMOS
Continuous Drain Current (ID) 600mA
Gate to Source Voltage (Vgs) 6V
Gain 22.5dB
Power - Output 33dBm
Voltage - Test 7.5V
Radiation Hardening No
RoHS Status RoHS Compliant
NE5550279A-A Product Details
The CEL Transistors - FETs, MOSFETs - RF NE5550279A-A is a high-performance FET designed for RF applications. It features a 30V drain-source voltage rating and a 900MHz frequency rating, making it ideal for use in high-frequency applications. The 79A drain current rating ensures that it can handle high power levels, while the low gate-source capacitance ensures minimal signal distortion. This FET is also designed for low noise operation, making it suitable for use in sensitive applications. With its high performance and reliable operation, the CEL Transistors - FETs, MOSFETs - RF NE5550279A-A is an excellent choice for RF applications.

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