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NE5550979A-A

NE5550979A-A

NE5550979A-A

CEL

FET RF 30V 900MHZ 79A-PKG

SOT-23

NE5550979A-A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Package / Case 4-SMD, Flat Leads
Number of Pins 4
Supplier Device Package 79A
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated 30V
Current Rating (Amps) 3A
Current Rating 3A
Frequency 900MHz
Base Part Number NE5550
Current - Test 200mA
Transistor Type LDMOS
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 6V
Gain 22dB
Power - Output 38.6dBm
Voltage - Test 7.5V
Radiation Hardening No
RoHS Status RoHS Compliant
NE5550979A-A Product Details
The CEL Transistors - FETs, MOSFETs - RF NE5550979A-A is a high-performance FET designed for RF applications. It features a 30V drain-source voltage rating and a 900MHz frequency rating, making it ideal for use in high-frequency applications. The 79A-PKG package provides excellent thermal and electrical performance, making it suitable for a wide range of applications. The device is designed to provide superior performance in terms of power handling, linearity, and efficiency. It is also designed to be highly reliable and durable, making it an ideal choice for long-term use. The CEL Transistors - FETs, MOSFETs - RF NE5550979A-A is an excellent choice for any RF application requiring high performance and reliability.

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