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NE856M02-T1-AZ

NE856M02-T1-AZ

NE856M02-T1-AZ

CEL

RF TRANSISTOR NPN SOT-89

SOT-23

NE856M02-T1-AZ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 1.2W
Frequency 6.5GHz
Base Part Number NE856
Number of Elements 1
Element Configuration Single
Power Dissipation 1.2W
Output Power 1.2W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA 10V
Collector Emitter Breakdown Voltage 12V
Gain 12dB
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
hFE Min 250
Continuous Collector Current 100mA
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.80000 $2.8
500 $2.772 $1386
1000 $2.744 $2744
1500 $2.716 $4074
2000 $2.688 $5376
2500 $2.66 $6650

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