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2N2368

2N2368

2N2368

Central Semiconductor

1 Elements 3 Terminations SILICON TO-18 Box

SOT-23

2N2368 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 9 Weeks
Package / Case TO-18
Surface MountNO
Transistor Element Material SILICON
PackagingBox
Published 2017
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Position BOTTOM
Terminal FormWIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code O-MBCY-W3
Qualification StatusNot Qualified
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Transistor Application SWITCHING
Gain Bandwidth Product400MHz
Collector Emitter Voltage (VCEO) 15V
Transition Frequency 400MHz
Collector Emitter Saturation Voltage250mV
Collector Base Voltage (VCBO) 40V
Power Dissipation-Max (Abs) 0.36W
Emitter Base Voltage (VEBO) 4V
hFE Min 20
Collector Current-Max (IC) 0.5A
DC Current Gain-Min (hFE) 20
Turn Off Time-Max (toff) 15ns
Turn On Time-Max (ton) 12ns
RoHS StatusNon-RoHS Compliant
In-Stock:2737 items

2N2368 Product Details

2N2368 Overview


This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.With the emitter base voltage set at 4V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 400MHz.

2N2368 Features


a collector emitter saturation voltage of 250mV
the emitter base voltage is kept at 4V
a transition frequency of 400MHz


2N2368 Applications


There are a lot of Central Semiconductor
2N2368 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

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