2N2368 Overview

This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.With the emitter base voltage set at 4V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 400MHz.

2N2368 Features

a collector emitter saturation voltage of 250mV
the emitter base voltage is kept at 4V
a transition frequency of 400MHz

2N2368 Applications

There are a lot of Central Semiconductor
2N2368 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting