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2N3964

2N3964

2N3964

Central Semiconductor

1 Elements 3 Terminations SILICON TO-18 Bulk

SOT-23

2N3964 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Package / Case TO-18
Transistor Element Material SILICON
Packaging Bulk
Published 2004
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature LOW NOISE
Subcategory Other Transistors
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code O-MBCY-W3
Qualification Status Not Qualified
Operating Temperature (Max) 175°C
Number of Elements 1
Polarity PNP
Power Dissipation-Max 360mW
Element Configuration Single
Gain Bandwidth Product 40MHz
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 200mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 40MHz
Collector Emitter Saturation Voltage 250mV
Frequency - Transition 50MHz
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 6V
hFE Min 250
DC Current Gain-Min (hFE) 250
RoHS Status RoHS Compliant
Lead Free Lead Free
2N3964 Product Details

2N3964 Overview


The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 40MHz.In extreme cases, the collector current can be as low as 200mA volts.

2N3964 Features


a collector emitter saturation voltage of 250mV
the emitter base voltage is kept at 6V
a transition frequency of 40MHz


2N3964 Applications


There are a lot of Central Semiconductor
2N3964 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

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