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1N4006 TR

1N4006 TR

1N4006 TR

Central Semiconductor Corp

DIODE GEN PURP 800V 1A DO41

SOT-23

1N4006 TR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Surface MountNO
PackagingTape & Reel (TR)
Published 2016
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Rectifier Diodes
Reach Compliance Code compliant
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 5μA @ 800V
Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A
Operating Temperature - Junction -65°C~175°C
Output Current-Max 1A
Voltage - DC Reverse (Vr) (Max) 800V
Current - Average Rectified (Io) 1A
Rep Pk Reverse Voltage-Max 800V
Non-rep Pk Forward Current-Max 30A
RoHS StatusRoHS Compliant
In-Stock:1689 items

About 1N4006 TR

The 1N4006 TR from Central Semiconductor Corp is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 800V 1A DO41.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 1N4006 TR, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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