CP336V-2N5551-CT20 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
CP336V-2N5551-CT20 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Operating Temperature
-65°C~150°C TJ
Packaging
Tray
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
200mV
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
160V
Voltage - Collector Emitter Breakdown (Max)
160V
Current - Collector (Ic) (Max)
600mA
Frequency - Transition
300MHz
RoHS Status
ROHS3 Compliant
CP336V-2N5551-CT20 Product Details
CP336V-2N5551-CT20 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 80 @ 10mA 5V.A VCE saturation (Max) of 200mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Product comes in the supplier's device package Die.This device displays a 160V maximum voltage - Collector Emitter Breakdown.A maximum collector current of 600mA volts is possible.
CP336V-2N5551-CT20 Features
the DC current gain for this device is 80 @ 10mA 5V the vce saturation(Max) is 200mV @ 5mA, 50mA the supplier device package of Die
CP336V-2N5551-CT20 Applications
There are a lot of Central Semiconductor Corp CP336V-2N5551-CT20 applications of single BJT transistors.