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CP373-CTLDM303N-WN

CP373-CTLDM303N-WN

CP373-CTLDM303N-WN

Central Semiconductor Corp

MOSFET (Metal Oxide) N-Channel 78m Ω @ 1.8A, 2.5V 12V 590pF @ 10V 13nC @ 4.5V 30V Die

SOT-23

CP373-CTLDM303N-WN Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case Die
Operating Temperature -55°C~150°C TJ
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 78m Ω @ 1.8A, 2.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 590pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.6A Ta
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) 12V
RoHS Status ROHS3 Compliant
CP373-CTLDM303N-WN Product Details

CP373-CTLDM303N-WN Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 590pF @ 10V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (2.5V 4.5V), this device helps reduce its overall power consumption.

CP373-CTLDM303N-WN Features


a 30V drain to source voltage (Vdss)


CP373-CTLDM303N-WN Applications


There are a lot of Central Semiconductor Corp
CP373-CTLDM303N-WN applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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