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CP736V-2N5401-CT

  • CP736V-2N5401-CT
  • CP736V-2N5401-CT

CP736V-2N5401-CT

CP736V-2N5401-CT

Central Semiconductor Corp

CP736V-2N5401-CT datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

CP736V-2N5401-CT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tray
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Position UPPER
Terminal Form NO LEAD
JESD-30 Code S-XUUC-N2
Number of Elements 1
Configuration SINGLE
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 150V
Transition Frequency 100MHz
Frequency - Transition 300MHz
RoHS Status ROHS3 Compliant
CP736V-2N5401-CT Product Details

CP736V-2N5401-CT Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 10mA 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 100MHz.During maximum operation, collector current can be as low as 600mA volts.

CP736V-2N5401-CT Features


the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
a transition frequency of 100MHz

CP736V-2N5401-CT Applications


There are a lot of Central Semiconductor Corp CP736V-2N5401-CT applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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