TIP49 TR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
TIP49 TR Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2016
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN LEAD
HTS Code
8541.29.00.95
Terminal Position
SINGLE
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
40W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 300mA 10V
Current - Collector Cutoff (Max)
1mA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 1A
Voltage - Collector Emitter Breakdown (Max)
350V
Current - Collector (Ic) (Max)
1A
Transition Frequency
10MHz
Frequency - Transition
10MHz
TIP49 TR Product Details
TIP49 TR Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 300mA 10V DC current gain.When VCE saturation is 1V @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).10MHz is present in the transition frequency.Collector Emitter Breakdown occurs at 350VV - Maximum voltage.
TIP49 TR Features
the DC current gain for this device is 30 @ 300mA 10V the vce saturation(Max) is 1V @ 200mA, 1A a transition frequency of 10MHz
TIP49 TR Applications
There are a lot of Central Semiconductor Corp TIP49 TR applications of single BJT transistors.