Fast Recovery Rectifier SILICON 260 DUAL Tape and Reel
SOT-23
B125FS Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Surface Mount
YES
Diode Element Material
SILICON
Number of Terminals
4
ECCN (US)
EAR99
HTS
8541.10.00.80
Bridge Type
Single Phase
Peak Reverse Repetitive Voltage (V)
250
Peak Average Forward Current (A)
1@Ta=50C
Peak RMS Reverse Voltage (V)
125
Peak Non-Repetitive Forward Surge Current (A)
44
Peak Forward Voltage (V)
1.3
Peak Reverse Current (uA)
5
Peak Reverse Recovery Time (ns)
300(Typ)
Minimum Operating Temperature (°C)
-50
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
Commercial
Supplier Package
SO-DIP SMD
Military
No
Mounting
Surface Mount
Package Height
2.5
Package Length
8.3
Package Width
6.4
PCB changed
4
Package Shape
RECTANGULAR
Manufacturer
Diotec Semiconductor AG
Packaging
Tape and Reel
Part Status
Active
ECCN Code
EAR99
Additional Feature
UL RECOGNIZED
HTS Code
8541.10.00.80
Subcategory
Bridge Rectifier Diodes
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
compliant
Pin Count
4
JESD-30 Code
R-PDSO-G4
Qualification Status
Not Qualified
Number of Elements
4
Configuration
Single
Diode Type
Fast Recovery Rectifier
Output Current-Max
1 A
Number of Phases
1
Rep Pk Reverse Voltage-Max
250 V
Non-rep Pk Forward Current-Max
44 A
Reverse Recovery Time-Max
0.3 µs
RoHS Status
Yes with exemptions
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.18000
$0.18
500
$0.1782
$89.1
1000
$0.1764
$176.4
1500
$0.1746
$261.9
2000
$0.1728
$345.6
2500
$0.171
$427.5
B125FS Product Details
B125FS Overview
The peak forward voltage is 1.3 according to the datasheets.This device can operate efficiently with a reverse voltage range of 125.This device can read a maximum output current voltage of 1 A.
B125FS Features
the forward peak voltage is 1.3 the peak RMS reverse voltage range of 125 a maximum output current voltage of 1 A
B125FS Applications
There are a lot of Diotec Semiconductor AG B125FS applications of RF diodes.