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BLF8G10LS-160

BLF8G10LS-160

BLF8G10LS-160

NXP SEMICONDUCTORS

BLF8G10LS-160 datasheet pdf and Unclassified product details from NXP SEMICONDUCTORS stock available on our website

SOT-23

BLF8G10LS-160 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount YES
Number of Terminals 2
Transistor Element Material SILICON
ECCN Code EAR99
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code R-CDFP-F2
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 56A
DS Breakdown Voltage-Min 65V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY B
RoHS Status RoHS Compliant

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