FQI8N60C

new-10%

Manufacturer part number:FQI8N60C

Manufacturer:ON SEMICONDUCTOR

Description:FQI8N60C datasheet pdf and Unclassified product details from ON SEMICONDUCTOR stock available on our website

Case Package:SOT-23

Datasheet:FQI8N60C Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Surface Mount	NO
Number of Terminals	3
Transistor Element Material	SILICON
ECCN Code	EAR99
HTS Code	8541.29.00.95
Terminal Position	SINGLE
Terminal Form	THROUGH-HOLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Transistor Application	SWITCHING
Polarity/Channel Type	N-CHANNEL
Drain Current-Max (Abs) (ID)	7.5A
Drain-source On Resistance-Max	1.2Ohm
Pulsed Drain Current-Max (IDM)	30A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	230 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
RoHS Status	RoHS Compliant