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IRFS11N50ATRRPBF

IRFS11N50ATRRPBF

IRFS11N50ATRRPBF

VISHAY SILICONIX

IRFS11N50ATRRPBF datasheet pdf and Unclassified product details from VISHAY SILICONIX stock available on our website

SOT-23

IRFS11N50ATRRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount YES
Number of Terminals 2
Transistor Element Material SILICON
JESD-609 Code e3
Terminal Finish MATTE TIN
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-263AB
Drain Current-Max (Abs) (ID) 11A
Drain-source On Resistance-Max 0.52Ohm
Pulsed Drain Current-Max (IDM) 44A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 275 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status RoHS Compliant

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