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MX29GL512FDT2I-11G

MX29GL512FDT2I-11G

MX29GL512FDT2I-11G

Macronix

Memory IC 18.4mm mm

SOT-23

MX29GL512FDT2I-11G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Package / Case TFSOP
Surface Mount YES
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 56
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 85°C
Min Operating Temperature -40°C
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 0.5mm
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PDSO-G56
Supply Voltage-Max (Vsup) 3.6V
Temperature Grade INDUSTRIAL
Supply Voltage-Min (Vsup) 2.7V
Interface Parallel
Memory Type FLASH, NOR
Operating Mode ASYNCHRONOUS
Organization 32MX16
Memory Width 16
Memory Density 536870912 bit
Access Time (Max) 110 ns
Programming Voltage 3V
Alternate Memory Width 8
Length 18.4mm
Height Seated (Max) 1.2mm
Width 14mm
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
960 $6.22793 $5978.8128
MX29GL512FDT2I-11G Product Details

MX29GL512FDT2I-11G Overview


In terms of its memory type, it can be classified as FLASH, NOR. The case is embedded in TFSOP. On the chip, there are 56 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 3V is required for the operation of this memory device. A minimum operating temperature of -40°C is required for this device. It should not be operated above 85°C°C. A programming voltage of 3V is required to alter the state of certain nonvolatile memory arrays.

MX29GL512FDT2I-11G Features


Package / Case: TFSOP


MX29GL512FDT2I-11G Applications


There are a lot of Macronix
MX29GL512FDT2I-11G Memory applications.


  • eSRAM
  • mainframes
  • multimedia computers
  • networking
  • personal computers
  • servers
  • supercomputers
  • telecommunications
  • workstations,
  • DVD disk buffer

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