NE5511279A

new-10%

NE5511279A

Manufacturer part number:NE5511279A

Manufacturer:California Eastern Laboratories

Description:NE5511279A datasheet pdf and Transistors - FETs, MOSFETs - RF product details from California Eastern Laboratories stock available on our website

Case Package:SOT-23

Datasheet:NE5511279A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Material	Si
ECCN (US)	EAR99
HTS	8541.29.00.95
Number of Elements per Chip	1
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	20
Maximum Gate Source Voltage (V)	6
Maximum Gate Threshold Voltage (V)	2
Maximum Continuous Drain Current (A)	3
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	0.1
Typical Forward Transconductance (S)	2.3
Maximum Power Dissipation (mW)	20000
Typical Power Gain (dB)	18.5
Maximum Frequency (MHz)	900
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	125
Standard Package Name	Module
Supplier Package	Case 79A
Military	No
Mounting	Surface Mount
Package Height	0.9
Package Length	4.4(Max)
Package Width	4.2(Max)
PCB changed	4
Part Status	Obsolete
Pin Count	4
Configuration	Single
Channel Type	N
RoHS Status	RoHS non-compliant