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PSMN8R5-100ES

PSMN8R5-100ES

PSMN8R5-100ES

NXP SEMICONDUCTORS

PSMN8R5-100ES datasheet pdf and Unclassified product details from NXP SEMICONDUCTORS stock available on our website

SOT-23

PSMN8R5-100ES Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount NO
Number of Terminals 3
Transistor Element Material SILICON
JESD-609 Code e3
ECCN Code EAR99
Terminal Finish TIN
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard IEC-60134
JESD-30 Code R-PSIP-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-262AA
Drain Current-Max (Abs) (ID) 100A
Drain-source On Resistance-Max 0.0085Ohm
Pulsed Drain Current-Max (IDM) 429A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 219 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status RoHS Compliant

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