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SI4300DY-T1-E3

SI4300DY-T1-E3

SI4300DY-T1-E3

VISHAY SILICONIX

SI4300DY-T1-E3 datasheet pdf and Unclassified product details from VISHAY SILICONIX stock available on our website

SOT-23

SI4300DY-T1-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount YES
Number of Terminals 8
Transistor Element Material SILICON
JESD-609 Code e3
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 6.4A
Drain-source On Resistance-Max 0.0185Ohm
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 2.5W
RoHS Status RoHS Compliant

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