1N5402-G datasheet pdf and Diodes - Rectifiers - Single product details from Comchip Technology stock available on our website
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1N5402-G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Diode Element Material
SILICON
Packaging
Tape & Box (TB)
Published
2008
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Additional Feature
HIGH RELIABILITY
Subcategory
Rectifier Diodes
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
1N5402
JESD-30 Code
O-PALF-W2
Number of Elements
1
Configuration
SINGLE
Speed
Standard Recovery >500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
5μA @ 200V
Voltage - Forward (Vf) (Max) @ If
1V @ 3A
Case Connection
ISOLATED
Max Reverse Leakage Current
100μA
Operating Temperature - Junction
-65°C~125°C
Max Surge Current
200A
Output Current-Max
3A
Application
GENERAL PURPOSE
Max Reverse Voltage (DC)
200V
Average Rectified Current
3A
Number of Phases
1
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1N5402-G Product Details
1N5402-G Overview
This device produces a maximal reverse leakage current of 100μA volts.This device has an average rectified current of 3A volts.Phase diode rectifier is possible to use a surge current of maximum value 200A.The maximum output current is 3A.
1N5402-G Features
a maximal reverse leakage current of 100μA volts an average rectified current of 3A volts 3A is the maximum value
1N5402-G Applications
There are a lot of Comchip Technology 1N5402-G applications of single-phase diode rectifier.