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CDBDSC5650-G

  • CDBDSC5650-G
  • CDBDSC5650-G

CDBDSC5650-G

CDBDSC5650-G

Comchip Technology

DIODE SILICON CARBIDE POWER SCHO

SOT-23

CDBDSC5650-G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 100μA @ 650V
Voltage - Forward (Vf) (Max) @ If 1.7V @ 5A
Operating Temperature - Junction -55°C~175°C
Voltage - DC Reverse (Vr) (Max) 650V
Current - Average Rectified (Io) 21.5A DC
Reverse Recovery Time 0ns
Capacitance @ Vr, F 424pF @ 0V 1MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.14000 $2.14
10 $1.93200 $19.32
80 $1.72500 $138
160 $1.55250 $248.4
320 $1.38000 $441.6
560 $1.20750 $676.2
1,040 $1.00050 $1.0005
2,560 $0.93150 $1.863
5,040 $0.89700 $4.485

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