CDBJSC10650-G

new-10%

Manufacturer part number:CDBJSC10650-G

Manufacturer:Comchip Technology

Description:DIODE SILICON CARBIDE POWER SCHO

Case Package:SOT-23

Datasheet:CDBJSC10650-G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Through Hole
Package / Case	TO-220-2 Full Pack
Surface Mount	NO
Packaging	Tube
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Additional Feature	PD-CASE
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T2
Operating Temperature (Max)	175°C
Number of Elements	1
Configuration	SINGLE
Power Dissipation-Max	109W
Speed	No Recovery Time > 500mA (Io)
Diode Type	Silicon Carbide Schottky
Current - Reverse Leakage @ Vr	100μA @ 650V
Voltage - Forward (Vf) (Max) @ If	1.7V @ 10A
Operating Temperature - Junction	-55°C~175°C
Output Current-Max	10A
Application	POWER
Voltage - DC Reverse (Vr) (Max)	650V
Current - Average Rectified (Io)	10A DC
Number of Phases	1
Reverse Recovery Time	0ns
Rep Pk Reverse Voltage-Max	650V
JEDEC-95 Code	TO-220AC
Capacitance @ Vr, F	710pF @ 0V 1MHz
Non-rep Pk Forward Current-Max	100A
Reverse Current-Max	100μA
RoHS Status	ROHS3 Compliant