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CURC306-G

CURC306-G

CURC306-G

Comchip Technology

DIODE GEN PURP 800V 3A DO214AB

SOT-23

CURC306-G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-214AB, SMC
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature LOW LEAKAGE CURRENT
HTS Code 8541.10.00.80
Subcategory Rectifier Diodes
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-C2
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 5μA @ 800V
Voltage - Forward (Vf) (Max) @ If 1.7V @ 3A
Operating Temperature - Junction 150°C Max
Output Current-Max 3A
Application ULTRA FAST RECOVERY
Voltage - DC Reverse (Vr) (Max) 800V
Max Reverse Voltage (DC) 800V
Average Rectified Current 3A
Number of Phases 1
Reverse Recovery Time 75 ns
Non-rep Pk Forward Current-Max 100A
Reverse Current-Max 5μA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.17050 $0.5115

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