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C3M0021120K

C3M0021120K

C3M0021120K

Cree/Wolfspeed

SiCFET (Silicon Carbide) N-Channel 28.8mOhm @ 50A, 15V +15V, -4V 4818pF @ 1000V 162nC @ 15V 1200V TO-247-4

SOT-23

C3M0021120K Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Through Hole
Package / Case TO-247-4
Supplier Device Package TO-247-4L
Operating Temperature -40°C~175°C TJ
Series C3M™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 469W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 28.8mOhm @ 50A, 15V
Vgs(th) (Max) @ Id 3.6V @ 17.7mA
Input Capacitance (Ciss) (Max) @ Vds 4818pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 162nC @ 15V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 15V
Vgs (Max) +15V, -4V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $36.93000 $36.93
500 $36.5607 $18280.35
1000 $36.1914 $36191.4
1500 $35.8221 $53733.15
2000 $35.4528 $70905.6
2500 $35.0835 $87708.75
C3M0021120K Product Details

C3M0021120K Overview


The maximum input capacitance of this device is 4818pF @ 1000V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 1200V in order to operate.Using drive voltage (15V), this device helps reduce its power consumption.

C3M0021120K Features


a 1200V drain to source voltage (Vdss)


C3M0021120K Applications


There are a lot of Cree/Wolfspeed
C3M0021120K applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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