C3M0065100K Description

Power MOSFET made of silicon carbide

C3M0065100K Features

• brand-new SiC MOSFET C3MTM technology

• Package optimization and separate driver source pin

• The creepage distance between the source and drain is 8 mm.

• Low on-resistance and high blocking voltage

• Low capacitance switching at high speeds

• Low reverse recovery, fast intrinsic diode (Qrr)

• RoHS-compliant and halogen-free

C3M0065100K Applications

• rechargers for EV batteries and renewable energy

• DC/DC converters with high voltage

• Power Supplies with a Switch Mode