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C3M0075120J

C3M0075120J

C3M0075120J

Cree/Wolfspeed

SiCFET (Silicon Carbide) N-Channel Tube 90m Ω @ 20A, 15V +19V, -8V 1350pF @ 1000V 51nC @ 15V 1200V TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

SOT-23

C3M0075120J Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series C3M™
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
Technology SiCFET (Silicon Carbide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G7
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 113.6W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 20A, 15V
Vgs(th) (Max) @ Id 4V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 51nC @ 15V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 15V
Vgs (Max) +19V, -8V
Drain Current-Max (Abs) (ID) 30A
Drain-source On Resistance-Max 0.09Ohm
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 1200V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $13.577103 $13.577103
10 $12.808587 $128.08587
100 $12.083573 $1208.3573
500 $11.399597 $5699.7985
1000 $10.754337 $10754.337
C3M0075120J Product Details

C3M0075120J Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1350pF @ 1000V maximal input capacitance.A device can conduct a maximum continuous current of [30A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 80A.The DS breakdown voltage should be maintained above 1200V to maintain normal operation.To operate this transistor, you will need a 1200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (15V).

C3M0075120J Features


based on its rated peak drain current 80A.
a 1200V drain to source voltage (Vdss)


C3M0075120J Applications


There are a lot of Cree/Wolfspeed
C3M0075120J applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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