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CY14B256LA-SZ45XI

CY14B256LA-SZ45XI

CY14B256LA-SZ45XI

Cypress Semiconductor Corp

Surface Mount 32 Pin Memory IC CY14*256 256 kb kb 20.88mm mm 52mA mA 8b b

SOT-23

CY14B256LA-SZ45XI Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Contact Plating Gold, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 32-SOIC (0.295, 7.50mm Width)
Number of Pins 32
Operating Temperature -40°C~85°C TA
Packaging Tube
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 32
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory SRAMs
Technology NVSRAM (Non-Volatile SRAM)
Voltage - Supply 2.7V~3.6V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 1.27mm
Frequency 1MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number CY14*256
Pin Count 32
Operating Supply Voltage 3V
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 256Kb 32K x 8
Nominal Supply Current 52mA
Memory Type Non-Volatile
Memory Format NVSRAM
Memory Interface Parallel
Data Bus Width 8b
Write Cycle Time - Word, Page 45ns
Address Bus Width 15b
Density 256 kb
Standby Current-Max 0.005A
Access Time (Max) 45 ns
Word Size 8b
Height 2.286mm
Length 20.88mm
Width 7.594mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $16.89000 $16.89
10 $15.63800 $156.38
44 $15.42068 $678.50992
88 $15.23136 $1340.35968
132 $13.34879 $1762.04028
264 $12.77167 $3371.72088
528 $12.68653 $6698.48784
CY14B256LA-SZ45XI Product Details

CY14B256LA-SZ45XI Description


The Cypress CY14B256LA-SZ45XI is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 32 K bytes of 8 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM provides infinite read and writes cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) occur automatically at power-down.



CY14B256LA-SZ45XI Features


25 ns and 45 ns access times

Internally organized as 32 K × 8 (CY14B256LA)

Hands off automatic STORE on power-down with only a tiny capacitor

STORE to QuantumTrap nonvolatile elements initiated by software, device pin, or AutoStore on power-down

RECALL to SRAM created by software or power-up

Infinite read, write and recall cycles

1 million STORE cycles to QuantumTrap

20-year data retention

Single 3 V +20% to –10% operation

Industrial temperature

44-pin thin small outline package (TSOP) Type II, 48-pin shrunk small outline package (SSOP), and 32-pin small-outline integrated circuit (SOIC) packages

Pb-free and restriction of hazardous substances (RoHS) compliance



CY14B256LA-SZ45XI Applications


Automotive 

Hybrid, electric & powertrain systems 

Communications equipment 

Wireless infrastructure 

Enterprise systems 

Enterprise machine


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