CY7C1312BV18-167BZI Overview

Volatile is the type of memory it has. There is a Tray case available. As you can see, it is embedded in 165-LBGA case. There is 18Mb 1M x 18 of memory on the chip. Memory data is stored in SRAM-format, which is common in mainstream devices. With an extended designed operating temperature of -40°C~85°C TA, this device is capable of lots of demanding applications. A voltage of 1.7V~1.9V can be supplied to memory ics. It is recommended that the mounting type be Surface Mount. It is planted on the chip with 165 terminations. There are 1 functions supported by this part as part of the comprehensive working process. The memory device designed for this application has been designed to be powered by an 1.8V power supply. There is a clock frequency rotation of the memory within a 167MHz range. When choosing similar parts, CY7C1312 is frequently referred to as the device's base part number. A 165-pin package containing this memory device is used to house this device. A memory device with 165 pins means that it contains 165 memory locations, indicating that it has 165 pins. It is noted that the operating supply voltage of this memory is 1.8V. It uses Surface Mount mounting, which is an efficient, straightforward mounting method. In terms of its nominal supply current, this memory component is rated at 600mA. While this memory chip features many merits, it also offers PIPELINED ARCHITECTURE for improving system performance. A memory address is accessed through 2 ports on this chip. I/O port addresses on this device are mapped to memory addresses of SEPARATE bits.

CY7C1312BV18-167BZI Features

Package / Case: 165-LBGA
165 Pins
Operating Supply Voltage:1.8V
Additional Feature:PIPELINED ARCHITECTURE
I/O Type: SEPARATE

CY7C1312BV18-167BZI Applications

There are a lot of Cypress Semiconductor Corp CY7C1312BV18-167BZI Memory applications.

• personal computers
• DVD disk buffer
• nonvolatile BIOS memory
• servers
• printers
• mainframes
• multimedia computers
• embedded logic
• eSRAM
• main computer memory