S25FL512SAGBHBB13 Overview

In this case, the memory type of the device can be classified as Non-Volatile. Case Tape & Reel (TR) is available. The case is embedded in 24-TBGA. There is 512Mb 64M x 8 of memory on the chip. FLASH-format memory is used in this device, which is a mainstream design. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. With 2.7V~3.6V as the supply voltage, it is capable of handling memory ics. Its recommended mounting type is Surface Mount. It is planted on the chip with 24 terminations. This part supports as many as 1 functions for the comprehensive working procedure. In order to power this memory device, 3V will be necessary. It has a clock frequency of 133MHz. Despite all its benefits, this memory chip also offers ITS ALSO CONFIGURABLE AS 512MX1 for improved system performance. It is an important component of the FL-S series memory devices used in a variety of applications. A programming voltage of 3V is required to change a nonvolatile memory array's state.

S25FL512SAGBHBB13 Features

Package / Case: 24-TBGA
Additional Feature:ITS ALSO CONFIGURABLE AS 512MX1

S25FL512SAGBHBB13 Applications

There are a lot of Cypress Semiconductor Corp S25FL512SAGBHBB13 Memory applications.

• eSRAM
• Cache memory
• workstations,
• supercomputers
• DVD disk buffer
• servers
• multimedia computers
• main computer memory
• data buffer
• personal computers