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S25FS512SDSNFB011

S25FS512SDSNFB011

S25FS512SDSNFB011

Cypress Semiconductor Corp

Automotive, AEC-Q100, FS-S Memory IC Automotive, AEC-Q100, FS-S Series 8mm mm

SOT-23

S25FS512SDSNFB011 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Surface Mount YES
Operating Temperature -40°C~105°C TA
Packaging Tube
Series Automotive, AEC-Q100, FS-S
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 8
Additional Feature IT ALSO HAVE MEMORY WIDTH X 1
HTS Code 8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 1.7V~2V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 1.8V
Terminal Pitch 1.27mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N8
Supply Voltage-Max (Vsup) 2V
Supply Voltage-Min (Vsup) 1.7V
Memory Size 512Mb 64M x 8
Memory Type Non-Volatile
Operating Mode SYNCHRONOUS
Clock Frequency 80MHz
Memory Format FLASH
Memory Interface SPI - Quad I/O, QPI
Organization 128MX4
Memory Width 4
Memory Density 536870912 bit
Parallel/Serial SERIAL
Programming Voltage 1.8V
Alternate Memory Width 2
Height Seated (Max) 0.8mm
Length 8mm
Width 6mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
164 $7.53378 $1235.53992
S25FS512SDSNFB011 Product Details

S25FS512SDSNFB011 Overview


As far as memory types are concerned, Non-Volatile is considered to be its memory type. The case comes in the Tube style. The 8-WDFN Exposed Pad case contains it. Memory size on the chip is 512Mb 64M x 8. Memory data is stored in FLASH-format, which is common in mainstream devices. With an extended designed operating temperature of -40°C~105°C TA, this device is capable of lots of demanding applications. With 1.7V~2V as the supply voltage, it is capable of handling memory ics. As far as the mounting type is concerned, Surface Mount is recommended. There are 8 terminations on the chip. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 1.8V is required for the operation of this memory device. In this memory, the clock frequency rotation is within an 80MHz range. Although it has all the merits this chip has, it is also equipped with IT ALSO HAVE MEMORY WIDTH X 1 to give a performance boost to the system. This part is part of the Automotive, AEC-Q100, FS-S series of memory devices, which play a key role in its target applications. A programming voltage of 1.8V is required to change a nonvolatile memory array's state.

S25FS512SDSNFB011 Features


Package / Case: 8-WDFN Exposed Pad
Additional Feature:IT ALSO HAVE MEMORY WIDTH X 1

S25FS512SDSNFB011 Applications


There are a lot of Cypress Semiconductor Corp S25FS512SDSNFB011 Memory applications.

  • data buffer
  • mainframes
  • DVD disk buffer
  • networks
  • printers
  • eSRAM
  • personal computers
  • telecommunications
  • nonvolatile BIOS memory
  • cell phones

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