HyperFlash? KL Memory IC HyperFlash? KL Series 8mm mm
SOT-23
S26KL128SDABHN030 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
24-VBGA
Surface Mount
YES
Operating Temperature
-40°C~125°C TA
Packaging
Tray
Published
2016
Series
HyperFlash™ KL
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
24
HTS Code
8542.32.00.51
Technology
FLASH - NOR
Voltage - Supply
2.7V~3.6V
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Number of Functions
1
Supply Voltage
3V
Terminal Pitch
1mm
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PBGA-B24
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.7V
Memory Size
128Mb 16M x 8
Memory Type
Non-Volatile
Operating Mode
SYNCHRONOUS
Clock Frequency
100MHz
Access Time
96ns
Memory Format
FLASH
Memory Interface
Parallel
Organization
16MX8
Memory Width
8
Memory Density
134217728 bit
Programming Voltage
3V
Height Seated (Max)
1mm
Length
8mm
Width
6mm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$8.93000
$8.93
10
$8.03300
$80.33
25
$7.31840
$182.96
100
$6.60450
$660.45
338
$6.06899
$2051.31862
676
$5.53351
$3740.65276
S26KL128SDABHN030 Product Details
S26KL128SDABHN030 Overview
There is a Non-Volatile memory type associated with this device. It is available in a case with a Tray shape. The case is embedded in 24-VBGA. It is estimated that the memory size on the chip is 128Mb 16M x 8. There is a FLASH-format memory used in this device, which is the memory format used by mainstream devices. Due to its wide temperature range of -40°C~125°C TA, this device is well suited to a wide range of applications that require high performance. The device is capable of handling a supply voltage of 2.7V~3.6V. The recommended mounting type for memory ics is Surface Mount. The chip is terminated with 24 terminations. As many as 1 functions are supported for comprehensive working. Memory devices such as this one are designed to be powered by 3V and should be used as such. The memory has a clock frequency rotation within 100MHz. This part plays an important role in applications that target the HyperFlash? KL series of memory devices. The programming voltage required for certain nonvolatile memory arrays is 3V.
S26KL128SDABHN030 Features
Package / Case: 24-VBGA
S26KL128SDABHN030 Applications
There are a lot of Cypress Semiconductor Corp S26KL128SDABHN030 Memory applications.