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S26KS512SDABHM030

S26KS512SDABHM030

S26KS512SDABHM030

Cypress Semiconductor Corp

Automotive, AEC-Q100, HyperFlash? KS Memory IC Automotive, AEC-Q100, HyperFlash? KS Series 8mm mm

SOT-23

S26KS512SDABHM030 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 24-VBGA
Surface Mount YES
Operating Temperature -40°C~125°C TA
Packaging Tray
Published 2017
Series Automotive, AEC-Q100, HyperFlash™ KS
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 24
HTS Code 8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 1.7V~1.95V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 1.8V
Terminal Pitch 1mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PBGA-B24
Supply Voltage-Max (Vsup) 1.95V
Supply Voltage-Min (Vsup) 1.7V
Memory Size 512Mb 64M x 8
Memory Type Non-Volatile
Operating Mode SYNCHRONOUS
Clock Frequency 100MHz
Access Time 96ns
Memory Format FLASH
Memory Interface Parallel
Organization 64MX8
Memory Width 8
Memory Density 536870912 bit
Screening Level AEC-Q100; TS 16949
Programming Voltage 1.8V
Height Seated (Max) 1mm
Length 8mm
Width 6mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $18.46000 $18.46
10 $17.09600 $170.96
25 $16.85840 $421.46
50 $16.65140 $832.57
S26KS512SDABHM030 Product Details

S26KS512SDABHM030 Overview


In this case, the memory type of the device can be classified as Non-Volatile. Tray-cases are available. An embedded 24-VBGA case surrounds memory ics. 512Mb 64M x 8 is the chip's memory size. There is a mainstream memory format used by this device, which is called FLASH-format memory. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. It is supplied votage within 1.7V~1.95V. It is recommended that the mounting type be Surface Mount. There are 24 terminations on the chip. This part supports as many as 1 functions for the comprehensive working procedure. The memory device designed for this application has been designed to be powered by an 1.8V power supply. A clock frequency rotation within 100MHz is used for the ic memory chip to rotate data. Automotive, AEC-Q100, HyperFlash? KS series memory devices play an important role in the applications they target. There is a need for a programming voltage of 1.8V in order to modify the state of some nonvolatile memory arrays.

S26KS512SDABHM030 Features


Package / Case: 24-VBGA

S26KS512SDABHM030 Applications


There are a lot of Cypress Semiconductor Corp S26KS512SDABHM030 Memory applications.

  • personal computers
  • multimedia computers
  • personal digital assistants
  • hard disk drive (HDD)
  • nonvolatile BIOS memory
  • telecommunications
  • embedded logic
  • servers
  • workstations,
  • eSRAM

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