Automotive, AEC-Q100, AL-J Memory IC Automotive, AEC-Q100, AL-J Series
SOT-23
S29AL008J70BFA013 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mounting Type
Surface Mount
Package / Case
48-VFBGA
Surface Mount
YES
Operating Temperature
-40°C~85°C TA
Packaging
Tape & Reel (TR)
Published
2015
Series
Automotive, AEC-Q100, AL-J
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
48
HTS Code
8542.32.00.51
Technology
FLASH - NOR
Voltage - Supply
2.7V~3.6V
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Number of Functions
1
Supply Voltage
3V
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PBGA-B48
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.7V
Memory Size
8Mb 1M x 8 512K x 16
Memory Type
Non-Volatile
Operating Mode
ASYNCHRONOUS
Memory Format
FLASH
Memory Interface
Parallel
Organization
512KX16
Memory Width
16
Write Cycle Time - Word, Page
70ns
Memory Density
8388608 bit
Access Time (Max)
70 ns
Programming Voltage
3V
Alternate Memory Width
8
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
S29AL008J70BFA013 Product Details
S29AL008J70BFA013 Overview
A Non-Volatile-type memory can be classified as the memory type of this device. Tape & Reel (TR)-cases are available. There is a 48-VFBGA case embedded in it. The memory size of the chip is 8Mb 1M x 8 512K x 16 Mb. FLASH-format memory is used in this device, which is a mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. The device is capable of handling a supply voltage of 2.7V~3.6V. Its recommended mounting type is Surface Mount. The chip is terminated with 48 terminations. The comprehensive working procedure of this part involves 1 functions. Memory devices such as this one are designed to be powered by 3V and should be used as such. As a member of the Automotive, AEC-Q100, AL-J series memory devices, this part plays an important role for its target applications. Nonvolatile memory arrays require 3V programming voltage to change their state.
S29AL008J70BFA013 Features
Package / Case: 48-VFBGA
S29AL008J70BFA013 Applications
There are a lot of Cypress Semiconductor Corp S29AL008J70BFA013 Memory applications.