SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK
HTS Code
8542.32.00.51
Technology
FLASH - NOR
Voltage - Supply
1.65V~2.75V
Terminal Position
UPPER
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Number of Functions
1
Supply Voltage
2.6V
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUUC-N74
Qualification Status
Not Qualified
Supply Voltage-Max (Vsup)
2.75V
Supply Voltage-Min (Vsup)
2.5V
Memory Size
16Mb 512K x 32
Memory Type
Non-Volatile
Operating Mode
ASYNCHRONOUS
Clock Frequency
56MHz
Access Time
54ns
Memory Format
FLASH
Memory Interface
Parallel
Organization
512KX32
Memory Width
32
Write Cycle Time - Word, Page
60ns
Memory Density
16777216 bit
Programming Voltage
2.7V
RoHS Status
ROHS3 Compliant
S29CD016J0MDGH114 Product Details
S29CD016J0MDGH114 Overview
A Non-Volatile-type memory can be classified as the memory type of this device. Tape & Reel (TR)-cases are available. Embedded in the Die case, memory ics is a single file. It is estimated that the memory size on the chip is 16Mb 512K x 32. In this device, the memory is of the FLASH-format, which is a popular format in the mainstream computing sector. Suitable for use in a wide range of demanding applications, this device offers an extended operating temperature range of -40°C~145°C TA. With 1.65V~2.75V as the supply voltage, it is capable of handling memory ics. It is recommended that the mounting type be Surface Mount. There are 74 terminations on the chip. The comprehensive working procedure is supported by 1 functions in this part. This ic memory chip is designed to be supplied with 2.6V. In order to operate effectively, the memory rotates at a clock frequency within a range of 56MHz. Despite all its benefits, this memory chip also offers SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK for improved system performance. It is an important component of the CD-J series memory devices used in a variety of applications. To alter the state of certain nonvolatile memory arrays, 2.7V programming voltage is required.
S29CD016J0MDGH114 Features
Package / Case: Die Additional Feature:SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK
S29CD016J0MDGH114 Applications
There are a lot of Cypress Semiconductor Corp S29CD016J0MDGH114 Memory applications.