S29GL01GS10FAI020

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Manufacturer part number:S29GL01GS10FAI020

Manufacturer:Cypress Semiconductor Corp

Description:GL-S Memory IC GL-S Series 13mm mm

Case Package:SOT-23

Datasheet:S29GL01GS10FAI020 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mounting Type	Surface Mount
Package / Case	64-LBGA
Surface Mount	YES
Number of Pins	64
Operating Temperature	-40°C~85°C TA
Packaging	Tray
Series	GL-S
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	64
HTS Code	8542.32.00.51
Technology	FLASH - NOR
Voltage - Supply	2.7V~3.6V
Terminal Position	BOTTOM
Number of Functions	1
Supply Voltage	3V
Terminal Pitch	1mm
Supply Voltage-Max (Vsup)	3.6V
Supply Voltage-Min (Vsup)	2.7V
Memory Size	1Gb 64M x 16
Memory Type	Non-Volatile
Operating Mode	ASYNCHRONOUS
Access Time	100ns
Memory Format	FLASH
Memory Interface	Parallel
Organization	128MX8
Memory Width	8
Write Cycle Time - Word, Page	60ns
Memory Density	1073741824 bit
Programming Voltage	3V
Alternate Memory Width	1
Height Seated (Max)	1.4mm
Length	13mm
Width	11mm
RoHS Status	Non-RoHS Compliant

Quantity	Unit Price	Ext. Price
180	$8.88983	$1600.1694

S29GL01GS10FAI020 Overview

In this case, the memory type of the device can be classified as Non-Volatile. In addition, memory ics is available in a Tray case as well. The case is embedded in 64-LBGA. There is 1Gb 64M x 16 of memory on the chip. Memory data is stored in FLASH-format, which is common in mainstream devices. -40°C~85°C TA is an extended operating temperature range, making this device ideal for demanding applications. A voltage of 2.7V~3.6V can be supplied to memory ics. The recommended mounting type for this device is Surface Mount. A total of 64 terminations have been planted on the chip. The part supports at least 1 functions to ensure a comprehensive working process. This ic memory chip is designed to be supplied with 3V. In this ic memory chip, there is an 64-pin package that encloses the device. This part, which belongs to the GL-S series of memory devices, plays an important role in its target applications. Nonvolatile memory arrays require 3V programming voltages to change their states.