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S29GL01GS11FAIV10

S29GL01GS11FAIV10

S29GL01GS11FAIV10

Cypress Semiconductor Corp

GL-S Memory IC GL-S Series 1 Gb kb 13mm mm

SOT-23

S29GL01GS11FAIV10 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case 64-LBGA
Surface Mount YES
Number of Pins 64
Operating Temperature -40°C~85°C TA
Packaging Tray
Series GL-S
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 64
HTS Code 8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 1.65V~3.6V
Terminal Position BOTTOM
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 1mm
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 1Gb 64M x 16
Memory Type Non-Volatile
Access Time 110ns
Memory Format FLASH
Memory Interface Parallel
Organization 128MX8
Memory Width 8
Write Cycle Time - Word, Page 60ns
Density 1 Gb
Sync/Async Asynchronous
Programming Voltage 3V
Height Seated (Max) 1.4mm
Length 13mm
Width 11mm
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
180 $8.88983 $1600.1694
S29GL01GS11FAIV10 Product Details

S29GL01GS11FAIV10 Overview


Non-Volatile is its memory type. It comes in a Tray. In the case of 64-LBGA, it is embedded within the case. This chip has an 1Gb 64M x 16 size of memory on it, so a lot of data can be stored on it. This device utilizes a FLASH format memory which is of mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. There is a voltage range of 1.65V~3.6V for the supply voltage. Its recommended mounting type is Surface Mount. The chip has 64 terminations. The comprehensive working procedure of this part involves 1 functions. A voltage of 3V is required for the operation of this memory device. The memory device has an 64-pin package, which encloses it in a small package. This part, which belongs to the GL-S series of memory devices, plays an important role in its target applications. The programming voltage required for certain nonvolatile memory arrays is 3V.

S29GL01GS11FAIV10 Features


Package / Case: 64-LBGA
64 Pins

S29GL01GS11FAIV10 Applications


There are a lot of Cypress Semiconductor Corp S29GL01GS11FAIV10 Memory applications.

  • DVD disk buffer
  • data buffer
  • personal computers
  • personal digital assistants
  • cell phones
  • main computer memory
  • graphics card
  • embedded logic
  • telecommunications
  • eSRAM

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