S29GL01GT10GHI010

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Manufacturer part number:S29GL01GT10GHI010

Manufacturer:Cypress Semiconductor Corp

Description:GL-T Memory IC GL-T Series 9mm mm

Case Package:SOT-23

Datasheet:S29GL01GT10GHI010 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Surface Mount
Package / Case	56-VFBGA
Surface Mount	YES
Operating Temperature	-40°C~85°C TA
Packaging	Tray
Series	GL-T
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	56
HTS Code	8542.32.00.51
Technology	FLASH - NOR
Voltage - Supply	2.7V~3.6V
Terminal Position	BOTTOM
Number of Functions	1
Supply Voltage	3V
Terminal Pitch	0.8mm
JESD-30 Code	R-PBGA-B56
Supply Voltage-Max (Vsup)	3.6V
Supply Voltage-Min (Vsup)	2.7V
Memory Size	1Gb 128M x 8
Memory Type	Non-Volatile
Operating Mode	ASYNCHRONOUS
Access Time	100ns
Memory Format	FLASH
Memory Interface	Parallel
Organization	64MX16
Memory Width	16
Write Cycle Time - Word, Page	60ns
Memory Density	1073741824 bit
Programming Voltage	2.7V
Height Seated (Max)	1mm
Length	9mm
Width	7mm
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
260	$9.16608	$2383.1808

S29GL01GT10GHI010 Overview

As far as its memory type goes, it falls into the Non-Volatile category. Case Tray is available. An embedded 56-VFBGA case surrounds memory ics. On the chip, there is an 1Gb 128M x 8 memory, which is the size of the chip's memory. FLASH-format memory is used in this device, which is a mainstream design. The device's extended operating temperature range of -40°C~85°C TA makes it ideal for many demanding applications. There is a voltage range of 2.7V~3.6V for the supply voltage. A Surface Mount mounting type is recommended for this product. On the chip, there are 56 terminations that are planted. In total, 1 functions are supported by this part. There is a requirement for 3V to be supplied to this ic memory chip in order to operate. Among the GL-T series of memory devices, this part is essential for its applications. The programming voltage required for certain nonvolatile memory arrays is 2.7V.