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S29GL01GT13TFNV10

S29GL01GT13TFNV10

S29GL01GT13TFNV10

Cypress Semiconductor Corp

GL-T Memory IC GL-T Series 18.4mm mm

SOT-23

S29GL01GT13TFNV10 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 56-TFSOP (0.724, 18.40mm Width)
Surface Mount YES
Operating Temperature -40°C~125°C TA
Packaging Tray
Series GL-T
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 56
HTS Code 8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 1.65V~3.6V
Terminal Position DUAL
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 0.5mm
JESD-30 Code R-PDSO-G56
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 1Gb 128M x 8
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Access Time 130ns
Memory Format FLASH
Memory Interface Parallel
Organization 64MX16
Memory Width 16
Write Cycle Time - Word, Page 60ns
Memory Density 1073741824 bit
Programming Voltage 2.7V
Height Seated (Max) 1.2mm
Length 18.4mm
Width 14mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
91 $13.43945 $1222.98995
S29GL01GT13TFNV10 Product Details

S29GL01GT13TFNV10 Overview


As far as its memory type goes, it falls into the Non-Volatile category. In addition, memory ics is available in a Tray case as well. An embedded 56-TFSOP (0.724, 18.40mm Width) case surrounds memory ics. Memory size on the chip is 1Gb 128M x 8. This device uses a FLASH-format memory, which is of mainstream design. The device's extended operating temperature range of -40°C~125°C TA makes it ideal for many demanding applications. There is a voltage range of 1.65V~3.6V for the supply voltage. Its recommended mounting type is Surface Mount. The chip contains 56 terminations. For a comprehensive working procedure, this part supports as many as 1 functions. In order to operate this memory device, it must be supplied with 3V of power. Among the GL-T series of memory devices, this part is essential for its applications. A programming voltage of 2.7V is required to change a nonvolatile memory array's state.

S29GL01GT13TFNV10 Features


Package / Case: 56-TFSOP (0.724, 18.40mm Width)

S29GL01GT13TFNV10 Applications


There are a lot of Cypress Semiconductor Corp S29GL01GT13TFNV10 Memory applications.

  • networking
  • cell phones
  • servers
  • embedded logic
  • hard disk drive (HDD)
  • eDRAM
  • networks
  • data buffer
  • Cache memory
  • personal digital assistants

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