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S29GL064S80FHV010

S29GL064S80FHV010

S29GL064S80FHV010

Cypress Semiconductor Corp

GL-S Memory IC GL-S Series 13mm mm

SOT-23

S29GL064S80FHV010 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 64-LBGA
Surface Mount YES
Number of Pins 64
Operating Temperature -40°C~105°C TA
Packaging Tray
Series GL-S
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 64
HTS Code 8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Terminal Position BOTTOM
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 1mm
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 64Mb 4M x 16
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Access Time 80ns
Memory Format FLASH
Memory Interface Parallel
Organization 8MX8
Memory Width 8
Write Cycle Time - Word, Page 60ns
Programming Voltage 3V
Height Seated (Max) 1.4mm
Length 13mm
Width 11mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
180 $3.30928 $595.6704
S29GL064S80FHV010 Product Details

S29GL064S80FHV010 Overview


As far as memory types are concerned, Non-Volatile is considered to be its memory type. There is a Tray case available. The file is embedded in a 64-LBGA case. On the chip, there is an 64Mb 4M x 16 memory, which is the size of the chip's memory. As with most mainstream devices, this one uses FLASH-format memory. This device has an extended operating temperature range of -40°C~105°C TA, so it's perfect for a wide range of demanding applications. The device is capable of handling a supply voltage of 2.7V~3.6V. The recommended mounting type for this device is Surface Mount. The chip contains 64 terminations. In total, this part supports 1 functions. A voltage of 3V is required for the operation of this memory device. The memory device is enclosed in a package with an 64-pin connector. This part, which belongs to the GL-S series of memory devices, plays an important role in its target applications. A programming voltage of 3V is required to change a nonvolatile memory array's state.

S29GL064S80FHV010 Features


Package / Case: 64-LBGA
64 Pins

S29GL064S80FHV010 Applications


There are a lot of Cypress Semiconductor Corp S29GL064S80FHV010 Memory applications.

  • eDRAM
  • workstations,
  • eSRAM
  • graphics card
  • multimedia computers
  • nonvolatile BIOS memory
  • hard disk drive (HDD)
  • personal computers
  • networks
  • supercomputers

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