3/3.3V V GL-P Memory IC GL-P Series 128 Mb kb 18.4mm mm
SOT-23
S29GL128P11TAI010 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
56-TFSOP (0.724, 18.40mm Width)
Surface Mount
YES
Operating Temperature
-40°C~85°C TA
Packaging
Tray
Series
GL-P
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
56
ECCN Code
3A991.B.1.A
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8542.32.00.51
Technology
FLASH - NOR
Voltage - Supply
2.7V~3.6V
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
240
Number of Functions
1
Supply Voltage
3V
Terminal Pitch
0.5mm
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PDSO-G56
Supply Voltage-Max (Vsup)
3.6V
Power Supplies
3/3.3V
Supply Voltage-Min (Vsup)
2.7V
Memory Size
128Mb 16M x 8
Memory Type
Non-Volatile
Supply Current-Max
0.11mA
Memory Format
FLASH
Memory Interface
Parallel
Organization
128MX1
Memory Width
1
Write Cycle Time - Word, Page
110ns
Density
128 Mb
Standby Current-Max
0.000005A
Access Time (Max)
110 ns
Programming Voltage
3V
Alternate Memory Width
8
Data Polling
YES
Toggle Bit
YES
Command User Interface
YES
Number of Sectors/Size
128
Sector Size
128K
Page Size
8/16words
Ready/Busy
YES
Common Flash Interface
YES
Height Seated (Max)
1.2mm
Length
18.4mm
Width
14mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
S29GL128P11TAI010 Product Details
S29GL128P11TAI010 Overview
There is a Non-Volatile memory type associated with this device. It comes in a Tray. The case is embedded in 56-TFSOP (0.724, 18.40mm Width). There is an 128Mb 16M x 8 memory capacity on the chip. The device uses a mainstream FLASH-format memory. With an extended designed operating temperature of -40°C~85°C TA, this device is capable of lots of demanding applications. A voltage of 2.7V~3.6V is possible to be applied to the supply. The recommended mounting type for this device is Surface Mount. The chip contains 56 terminations. For a comprehensive working procedure, this part supports as many as 1 functions. In order to power this memory device, 3V will be necessary. This memory chip requires only 3/3.3V of power. As a member of the GL-P series memory devices, this part plays an important role for its target applications. In terms of power consumption, it can operate at a maximum supply of 0.11mA . A programming voltage of 3V is required to change a nonvolatile memory array's state. As a result, this memory has 128 specific divisions of varying sizes.
S29GL128P11TAI010 Features
Package / Case: 56-TFSOP (0.724, 18.40mm Width)
S29GL128P11TAI010 Applications
There are a lot of Cypress Semiconductor Corp S29GL128P11TAI010 Memory applications.