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S29GL128S11FHBV23

S29GL128S11FHBV23

S29GL128S11FHBV23

Cypress Semiconductor Corp

GL-S Memory IC GL-S Series 13mm mm

SOT-23

S29GL128S11FHBV23 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 64-LBGA
Surface Mount YES
Operating Temperature -40°C~105°C TA
Packaging Tape & Reel (TR)
Series GL-S
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 64
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 1mm
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PBGA-B64
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 128Mb 8M x 16
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Access Time 110ns
Memory Format FLASH
Memory Interface Parallel
Organization 16MX8
Memory Width 8
Write Cycle Time - Word, Page 60ns
Memory Density 134217728 bit
Screening Level AEC-Q100
Programming Voltage 3V
Height Seated (Max) 1.4mm
Length 13mm
Width 11mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.97000 $4.97
500 $4.9203 $2460.15
1000 $4.8706 $4870.6
1500 $4.8209 $7231.35
2000 $4.7712 $9542.4
2500 $4.7215 $11803.75
S29GL128S11FHBV23 Product Details

S29GL128S11FHBV23 Overview


Non-Volatile is the type of memory it has. The case comes in the Tape & Reel (TR) style. 64-LBGA case encloses it. There is 128Mb 8M x 16 of memory on the chip. As with most mainstream devices, this one uses FLASH-format memory. The device's extended operating temperature range of -40°C~105°C TA makes it ideal for many demanding applications. It is capable of handling a voltage supply of 2.7V~3.6V. There is a recommended mounting type of Surface Mount for it. The chip contains 64 terminations. The comprehensive working procedure of this part involves 1 functions. In order to power this memory device, 3V will be necessary. Among the GL-S series of memory devices, this part is essential for its applications. A programming voltage of 3V is required to change a nonvolatile memory array's state.

S29GL128S11FHBV23 Features


Package / Case: 64-LBGA

S29GL128S11FHBV23 Applications


There are a lot of Cypress Semiconductor Corp S29GL128S11FHBV23 Memory applications.

  • main computer memory
  • telecommunications
  • graphics card
  • servers
  • supercomputers
  • personal digital assistants
  • networks
  • embedded logic
  • personal computers
  • printers

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