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S29GL512N11FFI023

S29GL512N11FFI023

S29GL512N11FFI023

Cypress Semiconductor Corp

GL-N Memory IC GL-N Series 13mm mm

SOT-23

S29GL512N11FFI023 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case 64-LBGA
Surface Mount YES
Operating Temperature -40°C~85°C TA
Packaging Tape & Reel (TR)
Series GL-N
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 64
Terminal Finish Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 1mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PBGA-B64
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 512Mb 64M x 8 32M x 16
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Memory Format FLASH
Memory Interface Parallel
Organization 32MX16
Memory Width 16
Write Cycle Time - Word, Page 110ns
Memory Density 536870912 bit
Access Time (Max) 110 ns
Programming Voltage 3V
Alternate Memory Width 8
Height Seated (Max) 1.4mm
Length 13mm
Width 11mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,600 $7.19381 $7.19381
S29GL512N11FFI023 Product Details

S29GL512N11FFI023 Overview


As far as its memory type goes, it falls into the Non-Volatile category. It is supplied votage within Tape & Reel (TR). As you can see, it is embedded in 64-LBGA case. It is estimated that the memory size on the chip is 512Mb 64M x 8 32M x 16. There is a FLASH-format memory used in this device, which is the memory format used by mainstream devices. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 2.7V~3.6V is possible to be applied to the supply. The recommended mounting type for memory ics is Surface Mount. The chip contains 64 terminations. As many as 1 functions are supported for comprehensive working. This ic memory chip is designed to be supplied with 3V. This part, which belongs to the GL-N series of memory devices, plays an important role in its target applications. Nonvolatile memory arrays require 3V programming voltage to change their state.

S29GL512N11FFI023 Features


Package / Case: 64-LBGA

S29GL512N11FFI023 Applications


There are a lot of Cypress Semiconductor Corp S29GL512N11FFI023 Memory applications.

  • cell phones
  • supercomputers
  • networks
  • Cache memory
  • telecommunications
  • personal digital assistants
  • eSRAM
  • DVD disk buffer
  • data buffer
  • workstations,

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