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S29GL512S11GHI023

S29GL512S11GHI023

S29GL512S11GHI023

Cypress Semiconductor Corp

GL-S Memory IC GL-S Series 9mm mm

SOT-23

S29GL512S11GHI023 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 56-VFBGA
Surface Mount YES
Operating Temperature -40°C~85°C TA
Packaging Tape & Reel (TR)
Series GL-S
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 56
HTS Code 8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Terminal Position BOTTOM
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 0.8mm
JESD-30 Code R-PBGA-B56
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 512Mb 32M x 16
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Access Time 110ns
Memory Format FLASH
Memory Interface Parallel
Organization 32MX16
Memory Width 16
Write Cycle Time - Word, Page 60ns
Memory Density 536870912 bit
Programming Voltage 3V
Height Seated (Max) 1mm
Length 9mm
Width 7mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,700 $5.75505 $11.5101
S29GL512S11GHI023 Product Details

S29GL512S11GHI023 Overview


Its memory type can be classified as Non-Volatile. There is a Tape & Reel (TR) case available. There is a 56-VFBGA case embedded in it. It is estimated that the memory size on the chip is 512Mb 32M x 16. In this device, the memory is of the FLASH-format, which is a popular format in the mainstream computing sector. Suitable for use in a wide range of demanding applications, this device offers an extended operating temperature range of -40°C~85°C TA. A supply voltage of 2.7V~3.6V can be applied to it. A Surface Mount mounting type is recommended for this product. 56 terminations are planted on the chip. There are 1 functions supported by this part as part of the comprehensive working process. Memory devices such as this one are designed to be powered by 3V and should be used as such. GL-S series memory devices play an important role in the applications they target. A programming voltage of 3V is required to alter the state of certain nonvolatile memory arrays.

S29GL512S11GHI023 Features


Package / Case: 56-VFBGA

S29GL512S11GHI023 Applications


There are a lot of Cypress Semiconductor Corp S29GL512S11GHI023 Memory applications.

  • data buffer
  • personal digital assistants
  • main computer memory
  • eDRAM
  • supercomputers
  • Camcorders
  • printers
  • eSRAM
  • hard disk drive (HDD)
  • cell phones

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