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S29GL512S12DHBV10

S29GL512S12DHBV10

S29GL512S12DHBV10

Cypress Semiconductor Corp

GL-S Memory IC GL-S Series 9mm mm

SOT-23

S29GL512S12DHBV10 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 64-LBGA
Surface Mount YES
Number of Pins 64
Operating Temperature -40°C~105°C TA
Packaging Tray
Published 2017
Series GL-S
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 64
HTS Code 8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 1.65V~3.6V
Terminal Position BOTTOM
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 1mm
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 512Mb 32M x 16
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Access Time 120ns
Memory Format FLASH
Memory Interface Parallel
Memory Width 8
Write Cycle Time - Word, Page 60ns
Memory Density 536870912 bit
Screening Level AEC-Q100
Programming Voltage 3V
Height Seated (Max) 1.4mm
Length 9mm
Width 9mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
260 $8.30677 $2159.7602
S29GL512S12DHBV10 Product Details

S29GL512S12DHBV10 Overview


In terms of its memory type, it can be classified as Non-Volatile. It is supplied votage within Tray. The file is embedded in a 64-LBGA case. It is estimated that the memory size on the chip is 512Mb 32M x 16. As with most mainstream devices, this one uses FLASH-format memory. This device has an extended operating temperature range of -40°C~105°C TA, so it's perfect for a wide range of demanding applications. A voltage of 1.65V~3.6V can be supplied to memory ics. The recommended mounting type for this device is Surface Mount. The chip has 64 terminations. In total, 1 functions are supported by this part. There is a requirement for 3V to be supplied to this ic memory chip in order to operate. It is encased in an 64-pin package that contains this ic memory chip. GL-S series memory ics play a crucial role in the target applications of this part. To alter the state of certain nonvolatile memory arrays, 3V programming voltage is required.

S29GL512S12DHBV10 Features


Package / Case: 64-LBGA
64 Pins

S29GL512S12DHBV10 Applications


There are a lot of Cypress Semiconductor Corp S29GL512S12DHBV10 Memory applications.

  • Cache memory
  • data buffer
  • networks
  • personal digital assistants
  • printers
  • eSRAM
  • telecommunications
  • DVD disk buffer
  • eDRAM
  • hard disk drive (HDD)

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