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S29GL512T10DHI010

S29GL512T10DHI010

S29GL512T10DHI010

Cypress Semiconductor Corp

GL-T Memory IC GL-T Series 9mm mm

SOT-23

S29GL512T10DHI010 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 64-LBGA
Surface Mount YES
Operating Temperature -40°C~85°C TA
Packaging Tray
Published 2016
Series GL-T
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 64
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Terminal Position BOTTOM
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 1mm
JESD-30 Code S-PBGA-B64
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 512Mb 64M x 8
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Access Time 100ns
Memory Format FLASH
Memory Interface Parallel
Organization 32MX16
Memory Width 16
Write Cycle Time - Word, Page 60ns
Memory Density 536870912 bit
Programming Voltage 2.7V
Alternate Memory Width 8
Height Seated (Max) 1.4mm
Length 9mm
Width 9mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.91000 $7.91
10 $7.27900 $72.79
25 $7.12760 $178.19
50 $7.10220 $355.11
100 $6.37140 $637.14
260 $6.17819 $1606.3294
520 $5.87581 $3055.4212
1,040 $5.67000 $5.67
S29GL512T10DHI010 Product Details

S29GL512T10DHI010 Overview


In terms of its memory type, it can be classified as Non-Volatile. The case comes in Tray size. In the case of 64-LBGA, it is embedded within the case. There is an 512Mb 64M x 8 memory capacity on the chip. There is a FLASH-format memory used in this device, which is the memory format used by mainstream devices. Due to its wide temperature range of -40°C~85°C TA, this device is well suited to a wide range of applications that require high performance. The device is capable of handling a supply voltage of 2.7V~3.6V volts. Its recommended mounting type is Surface Mount. It is planted on the chip with 64 terminations. For a comprehensive working procedure, this part supports as many as 1 functions. In order to power this memory device, 3V will be necessary. This part, which belongs to the GL-T series of memory devices, plays an important role in its target applications. Nonvolatile memory arrays require 2.7V programming voltages to change their states.

S29GL512T10DHI010 Features


Package / Case: 64-LBGA

S29GL512T10DHI010 Applications


There are a lot of Cypress Semiconductor Corp S29GL512T10DHI010 Memory applications.

  • telecommunications
  • eDRAM
  • mainframes
  • graphics card
  • printers
  • hard disk drive (HDD)
  • data buffer
  • personal digital assistants
  • cell phones
  • DVD disk buffer

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